1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on ) and to ensure minimal power loss and heat dissipation. typical applications are dc - dc converters and power management in portable and battery - powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m (ohm) i d (a) 65 @ v gs = -4.5v -4.5 100 @ v gs = -2.5v -4.2 150 @ v gs = -1.8v -3.1 pr oduct su mma ry -20 p - channel 20 - v (d - s) mosfet ? low r ds(on ) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop - 6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symb ol maximum units v ds -20 v gs 12 t a =25 o c -4.5 t a =70 o c -3.6 i dm 20 i s -1.7 a t a =25 o c 2.0 t a =70 o c 1.3 t j , t stg -55 to 150 o c cont inuou s source current (d iod e conduct ion) a absolute ma x imum ratin gs (t a = 25 o c unless other wise noted) param e t er pu l se d dra in current b v gate-source vo l tage dra in -source vo l tage cont inuou s dra in current a i d a power d i ss ip at ion a p d operat ing junct ion and storage temperature range w symbol maximum units 62.5 o c/w 110 o c/w thermal resistance ratings parameter maximum junction-to-ambient a t <= 5 sec r ?ja 1 2 3 4 5 6 si3443bdv/MC3443BDV freescale www.freescale.net.cn http://
2 - notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.7 gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d(on) v ds = -4.5 v, v gs = -4.5 v -15 a v gs = -4.5 v, i d = -4.5a 65 v gs = -2.5 v, i d = -3.8 a 100 v gs = -1.8 v, i d = -3.1 a 150 forward tranconductance a g fs v ds = -10 v, i d = -4.5 a 11 s diode forward voltage v sd i s = 1.7 a, v gs = 0 v -0.8 v total gate charge q g 8.0 gate-source charge q gs 1.8 gate-drain charge q gd 1.9 turn-on dela y time t d(on) 22 rise time t r 35 turn-off delay time t d(off) 45 fall-time t f 25 dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions sy mbol drain-source on-resistance a r ds(on) v dd = -10 v, r l = 6 o , i d = -1 a, vgen = -4.5 v ns v ds = -10 v, v gs = -4.5 v, i d = -4.5 a nc mohm parameter limits unit freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any p articular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any an d all liability, including without limitation special, consequen tial or incidental damages. ?typical? parameters which may be provided in freescale data sheets and/or specifications can and do vary in different appli cations and actual performance may vary over time. all operating parameters , including ? typicals ? must be validated for each customer application by customer?s technical experts. freescale does not convey any license u nder its patent rights nor the rights of others. freescale products a re not designed, intended, or authorized for use as components in systems intende d for surgical implant into the body, or other applications inte nded to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injur y or death may occur. should buyer purchase or use freescale products for any such unintende d or unauthorized application, buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and r easonable attorney fees arising out of, directly or indirectly, any claim of person al injury or death associated with such unintended or unauthoriz ed use, even if such claim alleges that freescale was negligent regarding the design or man ufacture of the part. freescale is an equal opportunity/affirmative a ction employer. si3443bdv/MC3443BDV freescale www.freescale.net.cn
3 typical electrical characteristics figure 5. gate charge figure 1. output characteristics figure 2. transfer characteristics figure 4. capacitance figure 6. on - resistance vs. junction temperature 0 300 600 900 1200 1500 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss 0 5 10 15 20 0 1 2 3 4 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -2.5v -2.0v -3.0v 0 5 10 15 0.5 1 1.5 2 2.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c figure 3. on - resistance vs. drain current 0.8 1 1.2 1.4 1.6 0 5 10 15 20 -i d , dirain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.5v -4.5v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance v gs = -4.5v i d =-3.6a -10 -8 -6 -4 -2 0 0 4 8 12 16 20 qg, charge (nc) vgs voltage ( v ) si3443bdv/MC3443BDV freescale www.freescale.net.cn
4 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125oc/w ta = 25oc 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c 0 .001 0 .01 0 .1 1 0.0001 0 .001 0.01 0 .1 1 10 1 00 1 000 t 1 , t i me ( sec) s i ng l e p ul se 0 .01 0 .02 0 .0 0 .1 0 .2 d = 0.5 rq ja (t) = r(t) + rq ja rq ja = 1 25 c/w t j - t a = p * rq ja (t) dut y c y c l e , d = t 1 / t2 p (pk t1 t2 typical electrical characteristics figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation figure 9. vth gate to source voltage vs temperature figure 7. source - drain diode forward voltage figure 8. on - resistance with gate to source voltage normalized thermal transient junction to ambient 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 t a , ambient temperature ( o c) -v th , gate-source thresthold voltage (v) i d = -250 m a i d =-3.6a 0 0.03 0.06 0.09 0.12 0.15 1 2 3 4 5 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) si3443bdv/MC3443BDV freescale www.freescale.net.cn
5 package information tsop - 6: 6lead si3443bdv/MC3443BDV freescale www.freescale.net.cn
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